|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/IPD110N12N3" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·Enhancement mode: ·100% |