|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/IPD65R380E6" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100 |