|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/IPP180N10N3" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP180N10N3,IIPP180N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤18mΩ |