|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/TTD1409B" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TTD1409B DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400 |