|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/CTL0423PS" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
CTL0423PS P-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS - 30 V Drain-Source On-Resistance RDS(ON) 34m, at VGS= |