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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/CTH4106NS-T52" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
CTH4106NS-T52 N-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS = 60V Drain-Source On-Resistance RDS(ON) 16m, at V |