|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/GT40Q322" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary www.datasheet4u.com GT40Q322 Unit: mm Voltage Resonance Inver |