|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/HAT1110R" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
HAT1110R Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • High density mounting |