|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/NTE3312" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturati |