|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/RJ1G12BGN" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
isc N-Channel MOSFET Transistor RJ1G12BGN FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Sour |