|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/30J101" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç • Th |