|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/IRFIB6N60A" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
iscN-Channel MOSFET Transistor IRFIB6N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V |