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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/EPC2016C" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
eGaN® FET DATASHEET EPC2016C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 16 mΩ ID , 18 A D G S EPC2016C EFFICIENT POWER CONVERSI |