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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/HYG170ND03LA1C1" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
HYG170ND03LA1C1 Dual N-Channel Enhancement Mode MOSFET Feature 30V/24A RDS(ON)= 15.6 mΩ(typ) @VGS = 10V RDS(ON)= 20.5 mΩ(typ) @VGS = 4.5V |