|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/CEU02N65G" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design |